Charged Residues at the First Transmembrane Region Contribute to the Voltage Dependence of the Slow Gate of Connexins

Bernardo I. PintoIsaac E. GarcíaAmaury PupoRETAMAL LUCERO, MAURICIO ANTONIOMAURICIO ANTONIORETAMAL LUCEROAgustín D. MartínezRamón LatorreCarlos González2022-09-282022-09-282016http://hdl.handle.net/11447/914https://investigadores.udd.cl/handle/123456789/320210.1074/jbc.M115.7094022-s2.0-84979220465WOS:000380584200027gap junctional communicationconformational-changespotassium channelmolecular-basishemichannelscloningdomainmouseporeselectivityCharged Residues at the First Transmembrane Region Contribute to the Voltage Dependence of the Slow Gate of ConnexinsResource Types::text::journal::journal article